GaN-on-diamond semiconductor materials can withstand temperatures, about the molybdenum disilicide heating elements price you should know
GaN-on-diamond semiconductor materials can withstand temperatures -- 1,000 degrees to be exact. About the molybdenum disilicide heating elements price you should know.
Today demand for more powerful electronic devices is limited by our ability to produce highly conductive semiconductors that can withstand the demanding, high-temperature manufacturing processes of high-power devices.
Gallium nitride (GaN) on diamond shows promise as a next-generation semiconductor material because the broad gap between the two materials allows for high electrical conductivity, while diamond high thermal conductivity makes it a superior thermal diffusion substrate. Attempts have been made to create GaN-on-Diamond structures by combining the two components with some form of transition layer or adhesive layer, but in both cases the extra layer severely affects the thermal conductivity of the diamond, thus defeating a key advantage of the GaN-Diamond combination.
"So we needed a technology that could directly integrate diamond and gallium nitride." "However, it is not possible to grow diamonds directly on gallium nitride and vice versa due to their very different crystal structures and lattice constants," said Liang Jianbo, lead author of the study and associate professor at the Graduate School of Engineering at Osaka City University (OCU). Fusing the two components together, known as wafer direct bonding, without any intermediate layers, is one way around this mismatch. However, in order to achieve sufficiently high bond strength, many direct bonding methods require heating the structure to extremely high temperatures (usually 500 degrees Celsius), a process known as post-annealing. Due to thermal expansion mismatches, this usually results in cracks in the bonded samples of different materials -- in this case, the GaN-diamond structure could not survive the extremely high temperatures experienced during high-power device manufacturing.
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Research leader Professor Naoteru Shigekawa said: "In previous work, we successfully prepared various interfaces with diamond at room temperature using surface activated bonding (SAB), all of which showed high thermal stability and excellent practicality. As reported this week in The journal Advanced Materials, Liang, Shigekawa and their namiki Precision Gemstones colleagues from Tohoku University, Saga University and JinGaNg. GaN and diamond were successfully bonded using the SAB method and the bond was proved to be stable even when heated to 1000 ° C.
Sabs clean and activate bonding surfaces by atoms at room temperature, resulting in highly strong bonds between different materials that react when they come into contact with each other. Since the chemistry of GaN is completely different from materials the research team used in the past, after they created the GaN-on-Diamond material using SAB, they used various techniques to test the stability of the binding site (or dissimilar interface). To characterize the residual stress at the heterogeneous interface in gallium nitride, they used microscopic Raman spectroscopy, transmission electron microscopy (TEM), and energy dispersive X-ray spectroscopy to reveal the nanostructure and atomic behavior of the heterogeneous interface. Electron energy loss spectroscopy (EELS) shows the chemical bonding status of carbon atoms at the heterogeneous interface and tests the thermal stability of the heterogeneous interface at ambient pressure of N2 gas at 700 degrees Celsius, "which is required for the manufacturing process of gallium nitride based power devices," Liang said.
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