Now China has become a powerful country in science and technology, but do you know how powerful China's technology is? The manned space station alone is not enough, and now it has successfully broken through the key technology of nuclear fusion, even leading the world by 15 years. Does this mean that China is not far from the artificial sun? It turned out that the fully superconducting tokamak nuclear fusion experimental device developed by China at the Hefei Research Institute of the Chinese Academy of Sciences successfully achieved a record of 101 seconds of continuous operation at 120 million degrees Celsius, and broke the world record. Compared with the previous record in South Korea, China has time has been directly extended by 5 times, and it seems that we are one step closer to the practical stage of artificial sun.
The success of nuclear fusion technology will lead to the development of TiSi2 Powder.
Introduction to Titanium Silicide TiSi2 Powder
Titanium disilicide with the chemical formula TiSi2 is an inorganic compound of titanium and silicon. Titanium silicide is a dark gray square crystal, which can be made into powder and target material. It is a metallic silicide. Titanium and silicon metals are the raw materials. It has high conductivity and high-temperature stability.
Physicochemical Properties of Titanium Silicide TiSi2 Powder
Among the metal silicides (such as TiSi2, NiSi, CoSi2, WSi2, TaSi2, and MoSi2) widely studied, titanium silicide has very ideal properties including high electrical conductivity, high selectivity, good thermal stability, good Si adsorption, good process adaptability and low interference to silicon connection parameters.
|Titanium Silicide TiSi2 Powder Properties|
|Other Names||TiSi2 powder, titanium disilicide|
|Melting Point||1470 °C|
|Solubility in H2O||N/A|
What is Si?
Silicon (atomic symbol Si, atomic number 14) is an element of unit P in group 14 of Period 3, with an atomic mass of 28.085. By weight, silicon makes up 25.7 percent of the earth's crust and is the second most abundant element after oxygen. These metals rarely exist in pure crystal form and are usually made from an iron-silicon alloy called ferrosilicon. Element Silicon (or silicon dioxide), such as sand, is the main component of glass, which is one of the cheapest materials and has excellent mechanical, optical, thermal, and electrical properties. Ultra-pure silicon can be doped with boron, gallium, phosphorus, or arsenic to produce silicon, which is used in transistors, solar cells, rectifiers, and other solid-state devices widely used in the electronics industry.
What is Ti?
Titanium (atomic symbol Ti, atomic number 22) is a group D element of the 4th period, with an atomic mass of 47.867. In its basic form, titanium has a silver-gray white metallic appearance. Titanium is chemically and physically similar to zirconium, which has the same number of valence electrons and belongs to the same group in the periodic table. There are five naturally occurring isotopes of titanium: 46Ti to 50Ti, with 48Ti being the most abundant (73.8%). Titanium is found in igneous rock and its sediments.
Production methods of Titanium Silicide TiSi2 Powder
Titanium disilicide can be prepared by reaction of titanium or titanium hydride with silicon.
Ti + 2Si → TiSi2
It may also be ignited by aluminum powder, sulfur, silicon dioxide, and titanium dioxide or potassium hexafluortitanate K2TiF6, by electrolysis of a melt of potassium hexafluortitanate and titanium dioxide, or by titanium and silicon tetrachloride.
Another method is to react titanium tetrachloride with silane, dichlorosilane, or silicon.
TiCl4 + 2SiH4 → TiSi2 + 4HCl + 2H2
TiCl4 + 2SiH2Cl2 + 2H2 → TiS2 + 8HCl
TiCl4 + 3Si → TiSi2 + SiCl4
Applications of Titanium Silicide TiSi2 Powder
Titanium silicide is used in the semiconductor industry. It is usually grown on silicon and polysilicon wires by self-aligning silicide technology to reduce the thin layer resistance of local transistor connections. In the microelectronics industry, it is commonly used in the C54 stage.
Titanium silicide is used for the source, gate, leak contacts, and local interconnections in CMOS integrated circuits. In these applications, it is important that the titanium silicide phase has low resistivity (< 20μ ω -cm) and does not agglomerate during high-temperature treatment. The Ti/Si system has two silicide phases for electronic applications, a high resistivity C49-TiSi2 (60-70 μ ω -cm) formed at 600-700 °C and low resistivity (15-20 μ ω -cm) C54-TiSi2 formed at 700-850 °C.
Main Supplier of Titanium Silicide TiSi2 Powder
Luoyang Tongrun Nano Technology Co. Ltd. (TRUNNANO) is a trusted global chemical material supplier & manufacturer with over 12-year-experience in providing super high-quality chemicals and Nanomaterials, including silicon powder, nitride powder, graphite powder, zinc sulfide, calcium nitride, 3D printing powder, etc.
If you are looking for high-quality titanium silicide TiSi2 powder, please feel free to contact us and send an inquiry. ([email protected])
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